A simulation study of interface mixing during ion-assisted deposition
β Scribed by Wen-Zhi Li; Fu-Zhai Cui; Yi Liao; Heng-De Li
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 449 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i
The density distribution of an iodide ion in the vicinity of a water/platinum interface has been calculated by classical molecular dynamics simulations based on painvise additive interaction potentials. The approach of the iodide ion to the surface is strondy sterically hindered by the layer of adso