✦ LIBER ✦

Simulation of hydrogen penetration intop-type silicon under wet chemical etching

✍ Scribed by O. V. Feklisova; E. B. Yakimov; N. A. Yarykin

Book ID: 110129612
Publisher: Springer
Year: 2002
Tongue: English
Weight: 54 KB
Volume: 36
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1461404

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hydrogen penetration into silicon during

Hydrogen penetration into silicon during wet-chemical etching

✍ J Weber; S Knack; O.V Feklisova; N.A Yarykin; E.B Yakimov 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 131 KB

Transformation of deep-level spectrum of

Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etching

✍ Feklisova, Olga V; Yarykin, Nikolai A 📂 Article 📅 1997 🏛 Institute of Physics 🌐 English ⚖ 146 KB

New trends in atomic scale simulation of

New trends in atomic scale simulation of wet chemical etching of silicon with koh

✍ H. Camon; Z. Moktadir; M. Djafari-Rouhani 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 384 KB

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data.