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Simulation of electromigration behaviour in Al metallization of integrated circuits

✍ Scribed by M. Scherge; V. Breternitz; Ch. Knedlik


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
229 KB
Volume
32
Category
Article
ISSN
0026-2714

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Al-SI-Cu films deposIted on substrates of SI, borophosphate silicate glass and TiW mth improved electrical properties (lower sheet resistance) and rehatnhty (lugher Al[lll] diffraction mtensity) obtained by the proposed metalbzatlon process are described A chemometrx approach of umfymg the expernnen