✍ Scribed by Ming-Kaan Liang; Yong-Chien Ling
No coin nor oath required. For personal study only.
Al-SI-Cu films deposIted on substrates of SI, borophosphate silicate glass and TiW mth improved electrical properties (lower sheet resistance) and rehatnhty (lugher Al[lll] diffraction mtensity) obtained by the proposed metalbzatlon process are described A chemometrx approach of umfymg the expernnental design, analysis of variance and regressIon analysis 1s shown to be an effectlve and efficient means of fine tumng ths metalllzation process Statistical results from the analysis of variance and regression analysis are helpful m vabdatmg each other The optimum deposition conditions are dependent on both the film quality and substrate Identity The vanations are attributed to the different interfacial propertics Keywords Experimental design, Optmuzation methods, Process analysis/on-hne analysis, Alummmm-nhca-copper films, Analysis of vanance, Integrated arcmts, Metalhzation, Regression analysis Alummmm 1s the most widely used metal for mterconnectlons and contacts on integrated clrcults (IC) because of its process compatlblhty, cost effectiveness and low sheet resistance With the progressive reduction m device size, rehablhty problems of electromlgratlon [l] and stress mlgratlon failure [2] become more series, 1 e , with very large scale integrated (VLSI) circuits To meet these challenges, a variety of process lmprovements have been mvestlgated First, Sl was added to the Al to prevent the splkmg of the shallow Junctions [3] The replacement of pure Al with an Al-9 film ameliorated the electromlgratlon problems [4] through the reduction of hillock formation [5] Subsequent addition of Cu to the Al-S1 to form an Al-Si-Cu alloy film allows better control of the size and orientation of the grams to avoid electromlgratlon Consequently, the lifetime of the device 1s increased These
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