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Simulation of boron diffusion during low-temperature annealing of implanted silicon

✍ Scribed by Velichko, O. I.; Kavaliova, A. P.

Book ID
120347626
Publisher
Springer
Year
2012
Tongue
English
Weight
444 KB
Volume
111
Category
Article
ISSN
1432-0630

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## Abstract Experiments on the kink concentration of boron were investigated using a low‐energy boron‐implanted Si. It was found that the kink concentration has a time dependence and the process of kink formation can be classified into three stages. It has been confirmed from this phenomenon that t