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Simulation and optimization of deep violet InGaN double quantum well laser

✍ Scribed by Gh. Alahyarizadeh; A.J. Ghazai; R. Rahmani; H. Mahmodi; Z. Hassan

Book ID
113831289
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
906 KB
Volume
285
Category
Article
ISSN
0030-4018

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## Abstract This work presents a theoretical comparison of efficiency in III‐nitride light emitting diodes (LEDs). We simulate non‐, semi‐, and polar devices, and analyze their __I__–__V__ characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structur