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Simulation of influence ternary AlGaN and quaternary AlInGaN blocking layers on temperature characteristic of double quantum well violet InGaN laser diodes

✍ Scribed by Rafid A. Abdullah; Kamarulazizi Ibrahim


Book ID
113650847
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
261 KB
Volume
123
Category
Article
ISSN
0030-4026

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