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Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

โœ Scribed by Sheng-Horng Yen; Bo-Jean Chen; Yen-Kuang Kuo

Publisher
Springer
Year
2006
Tongue
English
Weight
171 KB
Volume
38
Category
Article
ISSN
0306-8919

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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for