SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films
β Scribed by Hajime Haneda; Takeshi Ohgaki; Isao Sakaguchi; Haruki Ryoken; Naoki Ohashi; Atsuo Yasumori
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 309 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
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We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi