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Silicon–carbon films deposited at low substrate temperature

✍ Scribed by G. Ambrosone; U. Coscia; S. Lettieri; P. Maddalena; M. Della Noce; S. Ferrero; S. Restello; V. Rigato; M. Tucci

Book ID
116668913
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
363 KB
Volume
352
Category
Article
ISSN
0022-3093

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Silicon carbide film deposition at low t
Silicon carbide film deposition at low temperatures using monomethylsilane gas
✍ Hitoshi Habuka; Hiroshi Ohmori; Yusuke Ando 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 725 KB

A silicon carbide film is formed at low temperatures on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. A 0.2-μm thick film, obtained at 1073 K and at a hydrogen chloride gas concentration greater