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Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters

โœ Scribed by J. Symons; M. Ghannam; A. Neugroschel; J. Nijs; R. Mertens

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
316 KB
Volume
30
Category
Article
ISSN
0038-1101

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## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.