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Silicon epitaxial layer recombination and generation lifetime characterization

✍ Scribed by Schroder, D.K.; Choi, B.D.; Kang, S.G.; Ohashi, W.; Kitahara, K.; Opposits, G.; Pavelka, T.; Benton, J.

Book ID
114617063
Publisher
IEEE
Year
2003
Tongue
English
Weight
352 KB
Volume
50
Category
Article
ISSN
0018-9383

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Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt