Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
✦ LIBER ✦
Preparation and Characterization of Epitaxial CaSi2and Siloxene Layers on Silicon
✍ Scribed by Günther Vogg; Nikta Zamanzadeh-Hanebuth; Martin S. Brandt; Martin Stutzmann; Martin Albrecht
- Book ID
- 105747174
- Publisher
- Springer Vienna
- Year
- 1999
- Tongue
- English
- Weight
- 164 KB
- Volume
- 130
- Category
- Article
- ISSN
- 0026-9247
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