Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies

✍ Scribed by Badih El-Kareh (auth.)

• Publisher: Springer US
• Year: 2009
• Tongue: English
• Leaves: 614
• Edition: 1
• Category: Library

✦ Synopsis

Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions.

Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.

The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.

✦ Table of Contents

Front Matter....Pages i-xxv
Silicon Properties....Pages 1-53
Junctions and Contacts....Pages 55-133
The Bipolar Transistor....Pages 135-212
The MOS Structure....Pages 213-272
Insulated-Gate Field-Effect Transistor....Pages 273-368
Analog Devices and Passive Components....Pages 369-437
Enabling Processes and Integration....Pages 439-522
Applications....Pages 523-574
Back Matter....Pages 575-597

✦ Subjects

Circuits and Systems; Electronics and Microelectronics, Instrumentation; Electrical Engineering; Materials Science, general