✦ LIBER ✦

Silicon condenser microphone with integrated field-effect transistor

✍ Scribed by W. Kühnel

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 463 KB
Volume: 26
Category: Article
ISSN: 0924-4247
DOI: 10.1016/0924-4247(91)87043-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Silicon membrane condenser microphone wi

Silicon membrane condenser microphone with integrated field-effect transistor

✍ E. Graf; W. Kronast; S. Dühring; B. Müller; A. Stoffel 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 1019 KB

A new condenser microphone with a p+ sil

A new condenser microphone with a p+ silicon membrane

✍ T. Bourouina; S. Spirkovitch; F. Baillieu; C. Vauge 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 774 KB

This paper presents the results of investigations which have led to the batch fabrication of a new condenser microphone and the subsequent measurement of its characteristics. With an overall siz of 3 x 4 x 0.8 mm3 including an hybrid JFET, the microphone has an integrated back-chamber and is achieve

Silicon carbide microwave field-effect t

Silicon carbide microwave field-effect transistor: Effect of field dependent mobility

✍ B Tsap 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 443 KB

Amorphous silicon/Langmuir-Blodgett film

Amorphous silicon/Langmuir-Blodgett film field effect transistor

✍ J.P. Lloyd; M.C. Petty; G.G. Roberts; P.G. Lecomber; W.E. Spear 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 428 KB

Planar silicon field-effect transistors

Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators

✍ C.D. Fung; G.L. Larkins 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 475 KB

Silicon-on-insulator non-volatile field-

Silicon-on-insulator non-volatile field-effect transistor memory

✍ J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 104 KB

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were