𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Silicon-on-insulator non-volatile field-effect transistor memory

✍ Scribed by J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M. Fleetwood

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
104 KB
Volume
59
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

✦ Synopsis

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were transported to either the top or bottom Si-buried oxide interface, switching the leakage current of top gate transistors from an ON to an OFF state.

πŸ“œ SIMILAR VOLUMES

One Transistor–One Resistor Devices for
One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications
✍ Tae-Wook Kim; Hyejung Choi; Seung-Hwan Oh; Gunuk Wang; Dong-Yu Kim; Hyunsang Hwa πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 301 KB πŸ‘ 1 views

Over the past decade, organic electronics have been investigated due to their various merits, such as low cost, flexibility, easy fabrication, and printing capability. [1][2][3][4][5] Many researchers have reported high-performance organic light-emitting diodes (OLEDs), organic thin-film transistors