Over the past decade, organic electronics have been investigated due to their various merits, such as low cost, flexibility, easy fabrication, and printing capability. [1][2][3][4][5] Many researchers have reported high-performance organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs), and organic photovoltaics (OPVs). [1][2][3][4][5] In addition, with the rapid development of information technology, organic memory has become an important field for data-storage applications. Since Silva et al. reported the first organically based bistable memory devices, [6] many research groups have tried to develop novel polymer materials, optimal device structures, and fabrication methods for practical organic memory applications. [7][8][9][10][11][12][13][14][15][16][17] Recently, single-layer polymer nonvolatile memory devices with a vertical metal-insulator-metal (MIM) structure were demonstrated. [16][17][18] A direct metal-transfer method was introduced to fabricate cross-point-type organic memory devices with a 2 mm  2 mm cell size. [19] In addition, multilevel cells and multilayer stacking structures have been proposed to achieve high data-storage densities. [20][21][22][23] In spite of the extensive fundamental research on polymer memory devices, there have been little publications related to integrated polymer memory devices consisting of switch (transistor or diode) and memory (resistor) components. When polymer nonvolatile memory devices are scaled down and fabricated in a cross-point-type array structure, switch components, such as transistors or diodes, are indispensable to prevent unexpected crosstalk. These effects are caused by the misreading of the resistance state via low-resistance paths through unselected neighboring polymer memory cells, or an excess of current that may induce electrical damages in the memory element. [24][25][26] Therefore, fabrication and characterization of both transistors and polymer memory in one chip are essential. The single-transistor and memory (one transistor and one resistor; 1T-1R), or single-diode and memory (one diode and one resistor; 1D-1R) structure is a promising building block for achieving random accessibility in polymer nonvolatile memory applications. Particularly, 1T-1R or 1D-1R structures were suggested as a cell element for macromolecular memories (polymer memory) by the International Technology Roadmap for Semiconductors (ITRS).