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Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment

✍ Scribed by Lebedinskii, Yu.; Zenkevich, A.; Filatov, D.; Antonov, D.; Gushina, J.; Maximov, G.


Book ID
115527245
Publisher
Cambridge University Press
Year
2003
Weight
282 KB
Volume
786
Category
Article
ISSN
0272-9172

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Electron spin resonance (ESR) spectroscopy enables to assess on atomic scale the nature and structural aspects of interfaces and interlayers in semiconductor/insulator hetero structures. This has been applied to (1 0 0)/insulator entities with nm-thin amorphous layers of HfO 2 and LaAlO 3 of high di