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Silicide contacts for shallow junction devices

✍ Scribed by Marc Wittmer


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
706 KB
Volume
107
Category
Article
ISSN
0040-6090

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Nickel silicide formation on shallow junctions is investigated in this paper by X-ray diffraction, micro-Raman spectroscopy, Rutherford backscattering spectroscopy, cross-sectional and plan-view transmission electron microscopy and secondary ion mass spectroscopy. A mixture of Ni 2 Si and NiSi with