SiGe alloys and superlattices for optoelectronics
✍ Scribed by T.P. Pearsall
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 608 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Important advances in materials science and technology are opening the field of optoelectronics to device structures based on silicon and germanium. Optoelectronics offers new functionality to silicon integrated circuits which previously were thought to be limited to strictly electronic applications. In this paper we review recent achievements in optical modulators, detectors and light emitters fabricated from silicon and germanium. These devices hail the entry of silicon technology into a niche previously reserved for compound semiconductors. Innovations in materials growth and processing of siliconbased heterostructures are the locomotive driving this important development into optoelectronic materials.
📜 SIMILAR VOLUMES
Using a two-point probe the contact resistivities were studied at 300 K and the effect of heat treatment on them for W/W and W/Ta layers deposited on Si-Ge-GaP alloys. Up to 1000 K for 10 h the contact resistivity for the W/W deposited layers did not change from the value at 300 K. However, the W/Ta