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SiGe strained layer superlattices

✍ Scribed by Gerhard Abstreiter


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
442 KB
Volume
183
Category
Article
ISSN
0040-6090

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Deep levels in strained Si/Ge superlatti
✍ Hao Qiao; Zhi-Zhong Xu; Kai-Ming Zhang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 271 KB

The deep levels associated with vacancies and substitutional impurity atoms in \((\mathrm{Si})_{\mathrm{n}} /(\mathrm{Ge})_{\mathrm{m}}\) strained-layer superlattices (SLSLs) grown on \(\mathrm{Si}_{1-\mathrm{x}} \mathrm{Ge}_{\mathrm{x}}\) substrates are investigated theoretically. The band structur