Contact resistivities for sputtered W/W and W/Ta films on SiGe and SiGeGaP alloys

✍ Scribed by Zhang Bangwei; W.A. Jesser; F.D. Rosi

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 972 KB
• Volume: 13
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90148-3

✦ Synopsis

Using a two-point probe the contact resistivities were studied at 300 K and the effect of heat treatment on them for W/W and W/Ta layers deposited on Si-Ge-GaP alloys. Up to 1000 K for 10 h the contact resistivity for the W/W deposited layers did not change from the value at 300 K. However, the W/Ta deposited layers spontaneously broke into pieces after heat treatment at 1000 and 1100 K for 10 h. These results have been interpreted on the basis of differential thermal expansion coefficients between the deposited layers.