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Photocurrent spectroscopy measurements of SiGe alloys and superlattices

✍ Scribed by L. Colace; A. DiVergilio; S. Vaidyanathan; T.P. Pearsall; H. Presting; Erich Kasper


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
449 KB
Volume
102
Category
Article
ISSN
0169-4332

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We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films.