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Si epitaxial growth at low temperatures using remote plasma process

✍ Scribed by A. Yoshida; K. Utsumi; A. Ganjoo

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 254 KB
Volume: 100-101
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(96)00325-x

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