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Si diffusion in GaAs

✍ Scribed by P. Murugan; R Pothiraj; S. D. D. Roy; K. Ramachandran


Book ID
110638092
Publisher
Springer-Verlag
Year
2002
Tongue
English
Weight
78 KB
Volume
25
Category
Article
ISSN
0250-4707

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Correlation between Si diffusion and Si-
✍ Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 241 KB

Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio