Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices

✍ Scribed by Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishida; Masato Nakajima; Yasuo Bamba; Koichi Ishida

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 241 KB
• Volume: 2
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(86)90037-6

✦ Synopsis

Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS).

Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentration of about 3x1018 cm -3.

The annealing-condition dependence of the disordering suggests that AI-Ga intermixing is induced by the vacancy flow enhanced by the Siiii-Si v pair movement which causes the rapid Si diffusion.

SIMS depth profiles of the heat treated superlattices co-doped with Si and Be do not show any appreciable Si diffusion and induced disordering. This is wellexplained by the formation of Si-Be pairs which prevents that of Siii I-Si v pairs.