The static system decomposition kinetics of disilane (Si,H, A SiH, + SiH,, 538-587 K and 10-500 Torr), are reported. Reaction rate constants are weakly pressure dependent. and best fits of the data are realized with RHKM fall-off calculations using IogA,,. = 15.75 and E l , , = 52,200 cal. These par
Shock-induced kinetics of the disilane decomposition and silylene reactions with trimethylsilane and butadiene
โ Scribed by Dzarnoski, J.; Rickborn, S. F.; O'Neal, H. E.; Ring, M. A.
- Book ID
- 127029124
- Publisher
- American Chemical Society
- Year
- 1982
- Tongue
- English
- Weight
- 559 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0276-7333
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๐ SIMILAR VOLUMES
The kinetics and mechanism of the thermal decomposition of n-propylsilane have been studied by the single pulse shock tube-comparative rate technique a t pressures around 4700 torr between 1095-1240 K. The primary dissociation processes are 1,l and 1,2 H, elimination with &,,, = 0.75 and &,,\* = 0.2
The decomposition kinetics of ethylsilane under shock tube conditions (P, ca. 3100 torr, T = 1080-1245 K), both in the absence and presence of silylene trapping agents (butadiene and acetylene) are reported. Arrhenius parameters under maximum butadiene inhibition are: log K(C,H,SiH,) = 15.14-64,769