The kinetics and mechanism of the thermal decomposition of n-propylsilane have been studied by the single pulse shock tube-comparative rate technique a t pressures around 4700 torr between 1095-1240 K. The primary dissociation processes are 1,l and 1,2 H, elimination with &,,, = 0.75 and &,,\* = 0.2
The kinetics and mechanism of the shock induced gas phase decomposition of ethylsilane
β Scribed by S. F. Rickborn; M. A. Ring; H. E. O'Neal
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 533 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0538-8066
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β¦ Synopsis
The decomposition kinetics of ethylsilane under shock tube conditions (P, ca. 3100 torr, T = 1080-1245 K), both in the absence and presence of silylene trapping agents (butadiene and acetylene) are reported. Arrhenius parameters under maximum butadiene inhibition are: log K(C,H,SiH,) = 15.14-64,769 2 1433 ca1/2.303 R T log K(C,H,SiD,) = 15.29-66,206 ? 1414/2.303 RT. The uninhibited reaction is subject to silylene induced decomposition (63% lowest T -24% highest 2'). Major reaction products are ethylene and hydrogen, consistent with two dominant primary dissociation reactions:
π SIMILAR VOLUMES
The shock-induced thermal decompositions of vinylsilane and vinylsilane-d, (0.2% on argon) have been studied in the temperature range of 1085-1275 K, and at total pressures of about 3100 tom. In systems without silylene traps, some induced decomposition occurs which is attributed to the silylene cha
The gas-phase decompositions of methylsilane and methylsilane-d3 have been investigated in a single-pulse shock tube at 4700 torr total pressure in the temperature range of 1125-1250 K. For CH3SiD3 at 1200 K three primary steps occur in the homogeneous decomposition with efficiencies in parentheses:
## Abstract The kinetics of the thermal decomposition reaction of gaseous 3,3,6,6βtetramethylβ1,2,4,5βtetroxane (ACDP) in the presence of __n__βoctane was studied in the 403.2β523.2 K temperature range. This reaction yields acetone as the organic product. Under optimum conditions, firstβorder kinet
The homogeneous gas-phase decomposition kinetics of methylsilane and methylsilane-d3 have been investigated by the comparative-rate-single-pulse shock-tube technique a t total pressures of 4700 torr in the 1125-1250 K temperature range. Three primary processes occur: CH:$iH3 -CH3SiH + HS (l), CH3SiH
The homogeneous gas-phase decomposition kinetics of silane has been investigated using the single-pulse shock tube comparative rate technique (T = 1035-1184Β°K, P ~d = 4000 Torr). The initial reaction of the decomposition SiH4 ! + SiHz + H2 is a unimolecular process in its pressure fall-off regime w