## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann
✦ LIBER ✦
Shallow p-n junctions produced by laser doping with boron silicate glass
✍ Scribed by D. Bollmann; G. Neumayer; R. Buchner; K. Haberger
- Book ID
- 103616862
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 309 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0169-4332
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