Shallow acceptor luminescence in GaAs grown by liquid phase epitaxy
β Scribed by W.A. Brantley; C.J. Hwang; L.R. Dawson; H.J. Queisser
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 331 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0038-1098
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## Abstract In this paper the growth of Al~x~Ga~1βx~As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of th
Luminescence of Liquid Phase E p i t d a l 0axInl-,P Layers Grown on Differently Doped GaA s Substrates Luminescence properties of Ga In P have recently become subject of intensive research in laboratories throu&oui-&e world. Hawever, little is known on the 4 221 ( 1 d )