New Complex Defect in Heavily Doped GaAs:Zn Grown by Liquid Phase Epitaxy

Defect States in Cubic GaN Epilayer Grow

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

✍ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 89 KB 👁 2 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we