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Sensor properties of structures with porous silicon layer

โœ Scribed by Z. H. Mkhitaryan; V. M. Aroutiounian; Sh. A. Geghamyan


Book ID
111505779
Publisher
Allerton Press, Inc.
Year
2011
Tongue
English
Weight
177 KB
Volume
46
Category
Article
ISSN
1068-3372

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi