Semiconductor pressure-pulse sensor
✍ Scribed by V. Stankevič; Č. Šimkevičius
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 365 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0924-4247
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✦ Synopsis
The use of a semiconductor pressure sensor based on AlGaAs thin films to measure shock-wave pressures in lithotripters is described. The selection of an optimal thickness of encapsulant on the face of the pressure-sensitive chip enables a satisfactory durability and dynamic accuracy of the sensors to be obtained. Pressure sensors with a diameter of (1.3 \mathrm{~mm}) have a sensitivity of (1.5 \mathrm{mV} \mathrm{MPa}{ }^{-1}), a durability of about (2 \times 10^{4}) pressure pulses of (40 \mathrm{MPa}) in amplitude and a rise time less than (0.1 \mu \mathrm{s}). The advantages and disadvantages of the proposed sensor as compared to pressure-pulse sensors of other types are discussed.
📜 SIMILAR VOLUMES
The use of graded-composition epitaxial films of mixed compound semiconductor Al,Ga, \_-x As as high-pressure sensors has been studied. It is shown that sensors made of Al, Ga, \_ x As films have a high sensitivity to uniform pressure (5-lo%/100 MPa), a nearly linear dependence of resistance on pres