AlGaAs semiconductor pressure sensors

✍ Scribed by S. Žilionis; V. Stankevič

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 374 KB
• Volume: 26
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(91)87007-p

✦ Synopsis

The use of graded-composition epitaxial films of mixed compound semiconductor Al,Ga, _-x As as high-pressure sensors has been studied. It is shown that sensors made of Al, Ga, _ x As films have a high sensitivity to uniform pressure (5-lo%/100 MPa), a nearly linear dependence of resistance on pressure (non-linearity in the range O-l GPa is less than 2%) and a small temperature coefficient of sensitivity (about O.O2"/o/K). At the same time a small temperature coefficient of resistance (less than 0.02%/K) at atmospheric pressure can be obtained. The Al-GaAs pressure sensors are suitable for the measurement of pressure up to 1 GPa in the temperature range 120-400 K.