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Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy

โœ Scribed by Luis A. Zepeda-Ruiz; Dimitrios Maroudas; W.Henry Weinberg

Book ID
117218982
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
223 KB
Volume
418
Category
Article
ISSN
0039-6028

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Fabrication and elastic properties of In
Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems
โœ H Yamaguchi; R Dreyfus; S Miyashita; Y Hirayama ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 253 KB

InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs=GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length=thickness) of up to 10 3 . Without any intentional doping, the structures showed clear