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Disconnections and inversion domain formation in GaN/AlN heteroepitaxy on (111) silicon

✍ Scribed by G. P. Dimitrakopulos; A. M. Sanchez; Ph. Komninou; P. Ruterana; G. Nouet; Th. Kehagias; Th. Karakostas

No coin nor oath required. For personal study only.

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