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Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

✍ Scribed by Viola Kueller; Arne Knauer; Frank Brunner; Anna Mogilatenko; Michael Kneissl; Markus Weyers

Book ID
112182338
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
357 KB
Volume
9
Category
Article
ISSN
1862-6351

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In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of $ 300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC and the V/III ratio was changed from 240 to 8200 on f