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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

✍ Scribed by Imura, M. ;Nakano, K. ;Kitano, T. ;Fujimoto, N. ;Okada, N. ;Balakrishnan, K. ;Iwaya, M. ;Kamiyama, S. ;Amano, H. ;Akasaki, I. ;Shimono, K. ;Noro, T. ;Takagi, T. ;Bandoh, A.

Book ID: 105363646
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 386 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200565401

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✦ Synopsis

Abstract

Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal‐organic vapor phase epitaxy at high temperatures between 1300 °C and 1600 °C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 × 10^9^ cm^–2^. Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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