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Interface formation between layered-compound GaS and GaAs(111)A surface

โœ Scribed by A.B.M.O. Islam; K. Asai; K.K. Lim; T. Tambo; C. Tatsuyama

Book ID
117218855
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
392 KB
Volume
416
Category
Article
ISSN
0039-6028

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Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A