๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Interface formation between layered-compound GaS and GaAs(111)A surface

โœ Scribed by A.B.M.O. Islam; K. Asai; K.K. Lim; T. Tambo; C. Tatsuyama


Book ID
117218855
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
392 KB
Volume
416
Category
Article
ISSN
0039-6028

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Comparison of GaN Buffer Layers Grown on
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A