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Self-consistent calculation of current self-distribution effect in GaAs-AlGaAs oxide-confined VCSELs

✍ Scribed by Osinski, M.; Smagley, V.A.; Min Lu; Smolyakov, G.A.; Eliseev, P.G.; Riely, B.P.; Shen, P.H.; Simonis, G.J.


Book ID
114569729
Publisher
IEEE
Year
2003
Tongue
English
Weight
949 KB
Volume
9
Category
Article
ISSN
1077-260X

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The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped \(\mathrm{AlGaAs}\) barriers is calculated selfconsistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially