✦ LIBER ✦
Capacitance of a double-heterojunction GaAs/AlGaAs structure subjected to in-plane magnetic fields: results of self-consistent calculations
✍ Scribed by T. Jungwirth; L. Smrčka
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 274 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped (\mathrm{AlGaAs}) barriers is calculated selfconsistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D electron gas at individual heterojunctions due to a combination of the confining potential and the magnetic field.