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Self-consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double-heterojunction systems under electric fields

โœ Scribed by Inoue, Kaoru; Sakaki, Hiroyuki; Yoshino, Junji; Hotta, Takashi


Book ID
119953191
Publisher
American Institute of Physics
Year
1985
Tongue
English
Weight
636 KB
Volume
58
Category
Article
ISSN
0021-8979

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Capacitance of a double-heterojunction G
โœ T. Jungwirth; L. Smrฤka ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 274 KB

The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped \(\mathrm{AlGaAs}\) barriers is calculated selfconsistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially