The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand
Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
β Scribed by S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti
- Book ID
- 107470869
- Publisher
- Springer-Verlag
- Year
- 2010
- Tongue
- English
- Weight
- 229 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1931-7573
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga