𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

✍ Scribed by S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti


Book ID
107470869
Publisher
Springer-Verlag
Year
2010
Tongue
English
Weight
229 KB
Volume
5
Category
Article
ISSN
1931-7573

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Self-assembled GaAs local artificial sub
✍ S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 329 KB

The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand

Liquid phase epitaxy of GaAs on Si subst
✍ V. N. Brovkin; A. I. Kazakov; V. A. Presnov πŸ“‚ Article πŸ“… 1988 πŸ› John Wiley and Sons 🌐 English βš– 466 KB πŸ‘ 2 views
Optical properties of self-assembled InA
✍ P.P. GonzΓ‘lez-Borrero; E. Marega Jr; D.I. Lubyshev; E. Petitprez; P. Basmaji πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 136 KB

In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present

Self-assembled InAs quantum dots on anti
✍ W. Tantiweerasophon; S. Thainoi; P. Changmuang; S. Kanjanachuchai; S. Rattanatha πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 664 KB

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga