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Growth of GaAs quantum dots on Si substrate with artificial topography by ion sputtering

โœ Scribed by G Li; J Zhang; L Yang; Y Zhang; L Zhang

Book ID
114386471
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
258 KB
Volume
44
Category
Article
ISSN
1359-6462

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โœ Y.Y. Liang; S.F. Yoon; C.Y. Ngo; H. Tanoto; K.P. Chen; W.K. Loke; E.A. Fitzgeral ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 816 KB

We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร€ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร€ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized