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Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 μm

✍ Scribed by Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.


Book ID
121786038
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
339 KB
Volume
79
Category
Article
ISSN
0003-6951

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Near 1.3 μm Emission at Room Temperature
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We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The