Near 1.3 μm Emission at Room Temperature from InAsSb/GaAs Self-Assembled Quantum Dots on GaAs Substrates
✍ Scribed by K. Suzuki; Y. Arakawa
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 103 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The results showed that the average diameter of quantum dots observed by atomic force microscopy is $20 nm. Emission at 1.28 mm with full width at half-maximum of 52 meV was observed from InAs 0:9 Sb 0:1 quantum dots in an In 0:15 Ga 0:85 As matrix on GaAs substrate. This structure should be very useful for applying quantum dot lasers to optical communication systems for 1.3 mm.