We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The
✦ LIBER ✦
Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots
✍ Scribed by I Farrer; M.J Murphy; D.A Ritchie; A.J Shields
- Book ID
- 108341854
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 864 KB
- Volume
- 251
- Category
- Article
- ISSN
- 0022-0248
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Terahertz (THz) technology has attracted vast interests due to its wide applications. Quantum dot (QD) system is proposed to be the most suitable candidate for compact THz sources based on intraband transitions. However, transition energies of reported results still fall outside the THz range (with