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1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

✍ Scribed by Mukai, K.; Nakata, Y.; Otsubo, K.; Sugawara, M.; Yokoyama, N.; Ishikawa, H.


Book ID
117869505
Publisher
IEEE
Year
2000
Tongue
English
Weight
290 KB
Volume
36
Category
Article
ISSN
0018-9197

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Photoluminescence studies of self-assemb
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum