The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand
Self-assembled GaAs islands on Si by droplet epitaxy
β Scribed by Somaschini, C.; Bietti, S.; Koguchi, N.; Montalenti, F.; Frigeri, C.; Sanguinetti, S.
- Book ID
- 121797651
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 543 KB
- Volume
- 97
- Category
- Article
- ISSN
- 0003-6951
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## Abstract The cover picture refers to the Rapid Research Letter by Zhiming M. Wang et al. [1] and displays the nanostructure evolution during GaAs growth by droplet epitaxy. The two colored AFM images of 2 Β΅m Γ 2 Β΅m show the formation of GaAs nanoβcrystals shaped like lighted candles and squareβh
## Abstract We report on Ga nanoβdroplets on GaAs(100) that are not stable under arsenic flux. Spontaneous evolution in shape leads to many interesting GaAs nanostructures. GaAs nanoβcrystals shaped like lighted candles and squareβholed round coins are observed under different growth conditions. Th