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Self-assembled GaAs islands on Si by droplet epitaxy

✍ Scribed by Somaschini, C.; Bietti, S.; Koguchi, N.; Montalenti, F.; Frigeri, C.; Sanguinetti, S.


Book ID
121797651
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
543 KB
Volume
97
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES


Self-assembled GaAs local artificial sub
✍ S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 329 KB

The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand

Self-assembly of GaAs holed nanostructur
✍ Wang, Zhiming M. ;Holmes, Kyland ;Shultz, John L. ;Salamo, Gregory J. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 290 KB

## Abstract The cover picture refers to the Rapid Research Letter by Zhiming M. Wang et al. [1] and displays the nanostructure evolution during GaAs growth by droplet epitaxy. The two colored AFM images of 2 Β΅m Γ— 2 Β΅m show the formation of GaAs nano‐crystals shaped like lighted candles and square‐h

Self-assembly of GaAs holed nanostructur
✍ Wang, Zhiming M. ;Holmes, Kyland ;Shultz, John L. ;Salamo, Gregory J. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 222 KB

## Abstract We report on Ga nano‐droplets on GaAs(100) that are not stable under arsenic flux. Spontaneous evolution in shape leads to many interesting GaAs nanostructures. GaAs nano‐crystals shaped like lighted candles and square‐holed round coins are observed under different growth conditions. Th