𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Self-assembly of GaAs holed nanostructures by droplet epitaxy

✍ Scribed by Wang, Zhiming M. ;Holmes, Kyland ;Shultz, John L. ;Salamo, Gregory J.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
290 KB
Volume
202
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The cover picture refers to the Rapid Research Letter by Zhiming M. Wang et al. [1] and displays the nanostructure evolution during GaAs growth by droplet epitaxy. The two colored AFM images of 2 µm × 2 µm show the formation of GaAs nano‐crystals shaped like lighted candles and square‐holed round coins.

The first author, Zhiming M. Wang, is a research professor at the University of Arkansas, USA, and a member of the Molecular‐Beam Epitaxial group of Distinguished Professor Gregory J. Salamo. His current research interests include low‐dimensional semiconductor nanostructures, ferroelectronic and ferromagnetic nanostructures, and manipulation of single molecules.

This issue of physica status solidi (a) also contains contributions from the 4th International Conference “Porous Semiconductors – Science and Technology”, held 14–19 March 2004 in Cullera (Valencia), Spain. Further papers from PSST‐2004 are published in phys. stat. sol. (c) 2, No. 9 (2005).

📜 SIMILAR VOLUMES

Self-assembly of GaAs holed nanostructur
Self-assembly of GaAs holed nanostructures by droplet epitaxy
✍ Wang, Zhiming M. ;Holmes, Kyland ;Shultz, John L. ;Salamo, Gregory J. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 222 KB

## Abstract We report on Ga nano‐droplets on GaAs(100) that are not stable under arsenic flux. Spontaneous evolution in shape leads to many interesting GaAs nanostructures. GaAs nano‐crystals shaped like lighted candles and square‐holed round coins are observed under different growth conditions. Th

Self-assembled InGaAs tandem nanostructu
Self-assembled InGaAs tandem nanostructures consisting of a hole and pyramid on GaAs (311)A by droplet epitaxy
✍ Lee, J. H. ;Wang, Zh. M. ;Kim, E. S. ;Kim, N. Y. ;Park, S. H. ;Salamo, G. J. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 492 KB

## Abstract We report on the fabrication self‐assembled tandem (pyramidal‐ holed) InGaAs nanostructures on GaAs (311)A in comparison with the nanostructures on (100) surface. Under an identical growth condition, the fabricated nanostructures are characteristically dissimilar; ring‐shaped nanostruct

Self-assembled GaAs local artificial sub
Self-assembled GaAs local artificial substrates on Si by droplet epitaxy
✍ S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 329 KB

The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand

Outer zone morphology in GaAs ring/disk
Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy
✍ C. Somaschini; S. Bietti; A. Fedorov; N. Koguchi; S. Sanguinetti 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 305 KB

We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer disk-like region, which is developed following a layer-by-layer growth mode. We studied the influence of the growth temperature on the morpho